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1

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, J. M. Redwing, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 136 KB

english, 1999

2

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

A. Vescan, R. Dietrich, A. Wieszt, H. Tobler, H. Leier, J.M. Van Hove, P.P. Chow, A.M. Wowchak

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

3

Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs

R Dietrich, A Wieszt, A Vescan, H Leier, R Stenzel, W Klix

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

4

Intestinal and arterial plasma thromboxane and prostacyclin levels in shock: Effects of indomethacin

Tibor Mózes, Erzsébet Wieszt

Journal:

Journal of Surgical Research

Year:

1989

Language:

english

File:

PDF, 549 KB

english, 1989

5

Role of PGF2α in the superior mesenteric artery-induced shock

Tibor Mózes, Erzsébet Wieszt, Tibor Zahajszky

Journal:

Journal of Surgical Research

Year:

1989

Language:

english

File:

PDF, 680 KB

english, 1989

6

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Characteristics of AlGaN/GaN HEMT devices with SiN passivation

Jong-Soo Lee,, Vescan, A., Wieszt, A., Dietrich, R., Leier, H., Young-Se Kwon,

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

7

Role of prostanoids in respiratory failure during circulatory shock of intestinal origin in dogs

Mózes, T., Wieszt, E.

Journal:

Prostaglandins, Leukotrienes and Essential Fatty Acids (PLEFA)

Year:

1989

Language:

english

File:

PDF, 605 KB

english, 1989

8

Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

9

[IEEE 20000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, USA (7-9 Aug. 2000)] Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) - Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates

Vescan, A., Dietrich, R., Wieszt, A., Lee, J.-L., Schurr, A., Leier, H., Daumiller, I., Kab, N., Kohn, E.

Year:

2000

Language:

english

File:

PDF, 747 KB

english, 2000

10

Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

Lee, Jong-Soo, Vescan, A., Wieszt, A., Dietrich, R., Leier, H., Kwon, Young-Se

Journal:

Electronics Letters

Year:

2001

Language:

english

File:

PDF, 132 KB

english, 2001

11

AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz

Vescan, A., Dietrich, R., Wieszt, A., Schurr, A., Leier, H., Piner, E.L., Redwing, J.M.

Journal:

Electronics Letters

Year:

2000

Language:

english

File:

PDF, 300 KB

english, 2000

12

Current limitation after pinch-off in AlGaN/GaN FETs

Dietrich, R., Wieszt, A., Vescan, A., Leier, H., Redwing, Joan M., Boutros, Karim S., Kornitzer, K., Freitag, R., Ebner, T., Thonke, K.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2000

Language:

english

File:

PDF, 107 KB

english, 2000